 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features 15 AMPERES 410 VOLTS (Clamped) VCE(on) @ 10 A = 1.8 V Max N-Channel C * Ideal for Coil-On-Plug, IGBT-On-Coil, or Distributorless Ignition * * * * * * * * System Applications High Pulsed Current Capability up to 50 A Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage Optional Gate Resistor (RG) Pb-Free Package is Available G RGE RG E 1 D2PAK CASE 418B STYLE 4 TO-220AB CASE 221A-09 STYLE 9 1 MAXIMUM RATINGS (-55C TJ 175C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 150 1.0 -55 to 175 V W W/C C Value 440 440 22 15 50 Unit VDC VDC VDC ADC AAC kV 1 Gate MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Collector 4 Collector G1 5N40CL AYWW 3 Emit2 Collector ter G15N40CLG AYWW 1 Gate G15N40CL A Y WW G 3 2 Emitter Collector Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 December, 2005 - Rev. 8 Publication Order Number: MGP15N40CL/D MGP15N40CL, MGB15N40CL UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55C TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25C Symbol EAS 300 200 EAS(R) 1000 mJ Value Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient TO-220 D2PAK (Note 1) Symbol RqJC RqJA RqJA TL Value 1.0 62.5 50 275 C Unit C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 350 V, VGE = 0 V Reverse Collector-Emitter Leakage Current IECS VCE = -24 V TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA TJ = 25C TJ = 150C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Neg) Collector-to-Emitter On-Voltage - VCE(on) IC = 6.0 A, VGE = 4.0 V - TJ = 25C TJ = 150C TJ = -40C - TJ = 25C TJ = 150C TJ = -40C IC = 10 A, VGE 4.0 V TJ = 25C TJ = 150C TJ = -40C IC = 15 A, VGE = 4.0 V 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. TJ = 25C TJ = 150C TJ = -40C 1.4 0.75 1.6 - 1.0 0.9 1.1 1.3 1.2 1.3 1.6 1.7 1.6 1.7 1.1 1.9 4.4 1.3 1.2 1.4 1.6 1.5 1.6 1.95 2.0 1.9 2.0 1.4 2.1* - 1.6 1.5 1.7* 1.9 1.8 1.9* 2.25 2.3* 2.2 mV/C VDC VDC BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V - - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 390 - - - - - - 25 25 25 17 384 - 10 410 420 1.5 10 0.7 0.35 8.0 0.05 33 36 30 20 600 70 16 440 450 20 40* 1.5 1.0 15* 0.5 50 50 50 22 1000 - 26 VDC mADC W kW Symbol Test Conditions Temperature Min Typ Max Unit VDC mADC mA VDC http://onsemi.com 2 MGP15N40CL, MGB15N40CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3) Collector-to-Emitter On-Voltage VCE(on) IC = 20 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C IC = 25 A, VGE = 4.0 V Collector-to-Emitter On-Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-Off Delay Time (Inductive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, L = 300 mH VCC = 300 V, IC = 6.5 A RG = 1.0 kW, L = 300 mH VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C TJ = 25C TJ = 150C - - - - - - - - - - - - 4.0 4.5 7.0 10 4.0 4.5 13 16 1.0 1.0 4.5 5.0 10 10 10 15* 10 10 20 20 1.5 1.5 6.0 6.0 mSec mSec mSec CISS COSS CRSS - VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = -40C to 150C - - 1000 100 5.0 1300 130 8.0 pF VCE(on) gfs IC = 10 A, VGE = 4.5 V VCE = 5.0 V, IC = 6.0 A TJ = 25C TJ = 150C TJ = -40C TJ = 150C TJ = -40C to 150C 1.9 2.1 1.85 2.1 2.5 2.0 - 8.0 2.2 2.4 2.15 2.5 2.9 2.4 1.5 15 2.5 2.7* 2.45 2.9 3.3* 2.8 1.8 25 VDC Mhos VDC Fall Time (Inductive) tf Turn-Off Delay Time (Resistive) td(off) Fall Time (Resistive) tf Turn-On Delay Time td(on) Rise Time tr 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 MGP15N40CL, MGB15N40CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) VGE = 10.0 V 50 VGE = 5.0 V 40 30 20 VGE = 3.0 V 10 VGE = 2.5 V 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) TJ = 25C VGE = 4.0 V IC, COLLECTOR CURRENT (AMPS) VGE = 4.5 V 60 VGE = 10.0 V 50 VGE = 5.0 V 40 VGE = 4.0 V 30 20 10 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) TJ = 150C VGE = 3.5 V VGE = 3.0 V VGE = 2.5 V VGE = 4.5 V VGE = 3.5 V Figure 1. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 2. Output Characteristics 30 IC, COLLECTOR CURRENT (AMPS) 25 20 15 TJ = 150C 10 TJ = 25C 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGE, GATE TO EMITTER VOLTAGE (VOLTS) TJ = -40C VCE = 10 V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 IC = 15 A IC = 10 A 0 25 50 75 100 125 150 IC = 5 A VGE = 5.0 V IC = 20 A IC = 25 A TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage vs. Junction Temperature 2.5 THRESHOLD VOLTAGE (VOLTS) Mean + 4 2.0 10000 Ciss 1000 Mean IC = 1 mA C, CAPACITANCE (pF) 100 Coss 1.5 Mean - 4 1.0 10 Crss 0.5 0.0 -50 1 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) -25 0 25 50 75 100 125 150 TEMPERATURE (C) Figure 5. Capacitance Variation http://onsemi.com 4 Figure 6. Threshold Voltage vs. Temperature MGP15N40CL, MGB15N40CL 30 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 25 20 T = 25C 15 10 T = 150C 5 0 0 2 4 6 8 10 INDUCTOR (mH) VCC = 50 V VGE = 5.0 V RG = 1000 W 30 25 20 15 L = 3.0 mH 10 L = 6.0 mH 5 0 -50 L = 2.0 mH VCC = 50 V VGE = 5.0 V RG = 1000 W -25 0 25 50 75 100 125 150 175 TEMPERATURE (C) Figure 7. Minimum Open Secondary Latch Current vs. Inductor Figure 8. Minimum Open Secondary Latch Current vs. Temperature 30 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 25 20 15 10 5 0 0 2 4 6 8 10 INDUCTOR (mH) T = 150C T = 25C VCC = 50 V VGE = 5.0 V RG = 1000 W 30 25 20 L = 3.0 mH 15 L = 6.0 mH 10 5 0 -50 L = 2.0 mH VCC = 50 V VGE = 5.0 V RG = 1000 W -25 0 25 50 75 100 125 150 175 TEMPERATURE (C) Figure 9. Typical Open Secondary Latch Current vs. Inductor 12 10 SWITCHING TIME (mS) 8 6 4 2 0 -50 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH 14 12 tf SWITCHING TIME (mS) 10 8 6 4 2 0 -25 0 25 50 75 100 125 150 0 Figure 10. Typical Open Secondary Latch Current vs. Temperature tf VCC = 300 V VGE = 5.0 V RG = 1000 W TJ = 150C L = 300 mH td(off) td(off) 2 4 6 8 10 12 14 16 TC, CASE TEMPERATURE (C) IC, COLLECTOR CURRENT (AMPS) Figure 11. Switching Speed vs. Case Temperature Figure 12. Switching Speed vs. Collector Current http://onsemi.com 5 MGP15N40CL, MGB15N40CL 14 12 SWITCHING TIME (mS) 10 8 6 4 2 0 250 td(off) VCC = 300 V VGE = 5.0 V TJ = 25C IC = 10 A L = 300 mH tf 14 12 SWITCHING TIME (mS) 10 8 6 4 2 0 250 VCC = 300 V VGE = 5.0 V TJ = 150C IC = 10 A L = 300 mH tf td(off) 500 750 1000 500 750 1000 RG, EXTERNAL GATE RESISTANCE (W) RG, EXTERNAL GATE RESISTANCE (W) Figure 13. Switching Speed vs. External Gate Resistance Figure 14. Switching Speed vs. External Gate Resistance 10 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.00001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TA = P(pk) RqJA(t) RqJC R(t) for t 0.2 s 0.0001 0.001 0.01 0.1 t,TIME (S) 1 10 100 1000 Figure 15. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on fixture in Figure 16) http://onsemi.com 6 MGP15N40CL, MGB15N40CL 1.5 4 4 0.125 4 Figure 16. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) 100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 ms 1 100 ms 0.1 10 ms COLLECTOR CURRENT (AMPS) 100 DC 10 100 ms 1 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 18. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 7 MGP15N40CL, MGB15N40CL 100 DC 10 t1 = 3 ms, D = 0.30 1 P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 0.01 1 10 100 1000 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 COLLECTOR CURRENT (AMPS) 100 DC 10 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 10 100 1000 0.01 1 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 19. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 20. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) ORDERING INFORMATION Device MGP15N40CL MGP15N40CLG MGB15N40CLT4 Package TO-220AB TO-220AB (Pb-Free) D2PAK 50 Units / Rail 800 / Tape & Reel Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 MGP15N40CL, MGB15N40CL PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE J C E -B- 4 V W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M W J TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MGP15N40CL, MGB15N40CL PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 MGP15N40CL/D |
Price & Availability of MGP15N40CL05
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |